Residual stresses in multi-layered silicon-on-sapphire thin film systems
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This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness.
NOTICE: this is the author’s version of a work that was accepted for publication in International Journal of Solids and Structures. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in International Journal of International Journal of Solids and Structures, Volume 48, Issue 9, May 2011. DOI:10.1016/j.ijsolstr.2011.01.010
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