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dc.contributor.authorPramanik, Alokesh
dc.contributor.authorZhang, Liangchi
dc.date.accessioned2017-01-30T13:28:27Z
dc.date.available2017-01-30T13:28:27Z
dc.date.created2013-02-13T20:00:38Z
dc.date.issued2011
dc.identifier.citationPramanik, A. and Zhang, L. C. 2011. Residual stresses in multi-layered silicon-on-sapphire thin film systems. International Journal of Solids and Structures. 48 (9): pp. 1290-1300.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/31967
dc.identifier.doi10.1016/j.ijsolstr.2011.01.010
dc.description.abstract

This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness.

dc.publisherElsevier
dc.subjectBuffer layer
dc.subjectResidual stress
dc.subjectThin film
dc.subjectMultilayer
dc.subjectCooling
dc.titleResidual stresses in multi-layered silicon-on-sapphire thin film systems
dc.typeJournal Article
dcterms.source.volume48
dcterms.source.startPage1290
dcterms.source.endPage1300
dcterms.source.issn00207683
dcterms.source.titleInternational Journal of Solids and Structures
curtin.note

NOTICE: this is the author’s version of a work that was accepted for publication in International Journal of Solids and Structures. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in International Journal of International Journal of Solids and Structures, Volume 48, Issue 9, May 2011. DOI:10.1016/j.ijsolstr.2011.01.010

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curtin.accessStatusOpen access


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