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dc.contributor.authorMüller, M.
dc.contributor.authorSaxey, David
dc.contributor.authorCerezo, A.
dc.contributor.authorSmith, G.
dc.date.accessioned2017-01-30T13:47:06Z
dc.date.available2017-01-30T13:47:06Z
dc.date.created2016-09-12T08:36:41Z
dc.date.issued2010
dc.identifier.citationMüller, M. and Saxey, D. and Cerezo, A. and Smith, G. 2010. Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/35019
dc.identifier.doi10.1088/1742-6596/209/1/012026
dc.description.abstract

Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out and annular milling. An InAs buried quantum dot material was studied using laser-pulsed atom probe. The dot size, morphology and composition were evaluated as well as the wetting layers and interface composition. A laterally shifted In-rich core was visualised within the dots. Furthermore, a GeMn-based thin film was investigated to better-understand the mechanisms leading to the magnetic characteristics of this material system, which has potential applications as a magnetic semiconductor. We conclude that laser-pulsed atom probe has great potential for compound semiconductor research. © 2010 IOP Publishing Ltd.

dc.titleNanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
dc.typeConference Paper
dcterms.source.volume209
dcterms.source.issn1742-6588
dcterms.source.titleJournal of Physics: Conference Series
dcterms.source.seriesJournal of Physics: Conference Series
curtin.departmentJohn de Laeter CoE in Mass Spectrometry
curtin.accessStatusOpen access via publisher


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