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    Some aspects of the field evaporation behaviour of GaSb

    Access Status
    Fulltext not available
    Authors
    Müller, M.
    Saxey, David
    Smith, G.
    Gault, B.
    Date
    2011
    Type
    Journal Article
    
    Metadata
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    Citation
    Müller, M. and Saxey, D. and Smith, G. and Gault, B. 2011. Some aspects of the field evaporation behaviour of GaSb. Ultramicroscopy. 111 (6): pp. 487-492.
    Source Title
    Ultramicroscopy
    DOI
    10.1016/j.ultramic.2010.11.019
    ISSN
    0304-3991
    School
    School of Electrical Engineering, Computing and Mathematical Sciences
    URI
    http://hdl.handle.net/20.500.11937/7183
    Collection
    • Curtin Research Publications
    Abstract

    In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W, studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material.

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