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Creating a stable oxide at the surface of black phosphorus

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Authors
Edmonds, M.
Tadich, A.
Carvalho, A.
Ziletti, A.
O'Donnell, Kane
Koenig, S.
Coker, D.
Özyilmaz, B.
Neto, A.
Fuhrer, M.
Date
2015
Type
Journal Article

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Edmonds, M. and Tadich, A. and Carvalho, A. and Ziletti, A. and O'Donnell, K. and Koenig, S. and Coker, D. et al. 2015. Creating a stable oxide at the surface of black phosphorus. ACS Applied Materials and Interfaces. 7 (27): pp. 14557-14562.
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ACS Applied Materials and Interfaces
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Department of Physics and Astronomy
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Abstract

The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P2O5 forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.