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dc.contributor.authorEdmonds, M.
dc.contributor.authorTadich, A.
dc.contributor.authorCarvalho, A.
dc.contributor.authorZiletti, A.
dc.contributor.authorO'Donnell, Kane
dc.contributor.authorKoenig, S.
dc.contributor.authorCoker, D.
dc.contributor.authorÖzyilmaz, B.
dc.contributor.authorNeto, A.
dc.contributor.authorFuhrer, M.
dc.date.accessioned2017-01-30T13:48:59Z
dc.date.available2017-01-30T13:48:59Z
dc.date.created2015-10-29T04:09:18Z
dc.date.issued2015
dc.identifier.citationEdmonds, M. and Tadich, A. and Carvalho, A. and Ziletti, A. and O'Donnell, K. and Koenig, S. and Coker, D. et al. 2015. Creating a stable oxide at the surface of black phosphorus. ACS Applied Materials and Interfaces. 7 (27): pp. 14557-14562.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/35328
dc.identifier.doi10.1021/acsami.5b01297
dc.description.abstract

The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P2O5 forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.

dc.publisherAmerican Chemical Society
dc.titleCreating a stable oxide at the surface of black phosphorus
dc.typeJournal Article
dcterms.source.volume7
dcterms.source.number27
dcterms.source.startPage14557
dcterms.source.endPage14562
dcterms.source.issn1944-8244
dcterms.source.titleACS Applied Materials and Interfaces
curtin.departmentDepartment of Physics and Astronomy
curtin.accessStatusFulltext not available


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