| dc.contributor.author | Bennett, S. | |
| dc.contributor.author | Oliver, R. | |
| dc.contributor.author | Saxey, David | |
| dc.contributor.author | Cerezo, A. | |
| dc.contributor.author | Clifton, P. | |
| dc.contributor.author | Ulfig, R. | |
| dc.contributor.author | Kappers, M. | |
| dc.contributor.author | Humphreys, C. | |
| dc.date.accessioned | 2017-01-30T13:50:30Z | |
| dc.date.available | 2017-01-30T13:50:30Z | |
| dc.date.created | 2016-09-12T08:36:41Z | |
| dc.date.issued | 2009 | |
| dc.identifier.citation | Bennett, S. and Oliver, R. and Saxey, D. and Cerezo, A. and Clifton, P. and Ulfig, R. and Kappers, M. et al. 2009. Atom probe tomography studies of gan-based semiconductor materials. Microscopy and Microanalysis. 15 (SUPPL. 2): pp. 280-281. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/35582 | |
| dc.identifier.doi | 10.1017/S1431927609097979 | |
| dc.title | Atom probe tomography studies of gan-based semiconductor materials | |
| dc.type | Journal Article | |
| dcterms.source.volume | 15 | |
| dcterms.source.number | SUPPL. 2 | |
| dcterms.source.startPage | 280 | |
| dcterms.source.endPage | 281 | |
| dcterms.source.issn | 1431-9276 | |
| dcterms.source.title | Microscopy and Microanalysis | |
| curtin.department | John de Laeter CoE in Mass Spectrometry | |
| curtin.accessStatus | Open access via publisher | |
