Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

Pang, W; Low, It Meng; Hanna, J.

doi:10.4028/www.scientific.net/KEM.434-435.169

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Authors

Pang, W

Low, It Meng

Hanna, J.

Date

2010

Type

Journal Article

Metadata

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Citation

Pang, W. and Low, I.M. and Hanna, J. 2010. Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS. Key Engineering Materials. 434-435: pp. 169-172.

Source Title

Key Engineering Materials

DOI

10.4028/www.scientific.net/KEM.434-435.169

ISSN

10139826

School

School of Applied Science

URI

http://hdl.handle.net/20.500.11937/38454

Collection

Curtin Research Publications

Abstract

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at ≤1000°C.