Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS
| dc.contributor.author | Pang, W | |
| dc.contributor.author | Low, It Meng | |
| dc.contributor.author | Hanna, J. | |
| dc.date.accessioned | 2017-01-30T14:21:40Z | |
| dc.date.available | 2017-01-30T14:21:40Z | |
| dc.date.created | 2015-03-03T20:16:27Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Pang, W. and Low, I.M. and Hanna, J. 2010. Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS. Key Engineering Materials. 434-435: pp. 169-172. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/38454 | |
| dc.identifier.doi | 10.4028/www.scientific.net/KEM.434-435.169 | |
| dc.description.abstract |
The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at ≤1000°C. | |
| dc.publisher | Trans Tech Publications | |
| dc.title | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS | |
| dc.type | Journal Article | |
| dcterms.source.volume | 434-435 | |
| dcterms.source.startPage | 169 | |
| dcterms.source.endPage | 172 | |
| dcterms.source.issn | 10139826 | |
| dcterms.source.title | Key Engineering Materials | |
| curtin.department | School of Applied Science | |
| curtin.accessStatus | Fulltext not available |