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    Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    Access Status
    Open access via publisher
    Authors
    Shakhvorostov, D.
    Nistor, R.
    Krusin-Elbaum, L.
    Martyna, G.
    Newns, D.
    Elmegreen, B.
    Liu, X.
    Hughes, Zak
    Paul, S.
    Cabral, C.
    Raoux, S.
    Shrekenhamer, D.
    Basov, D.
    Song, Y.
    Mϋser, M.
    Date
    2009
    Type
    Journal Article
    
    Metadata
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    Citation
    Shakhvorostov, D. and Nistor, R. and Krusin-Elbaum, L. and Martyna, G. and Newns, D. and Elmegreen, B. and Liu, X. et al. 2009. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials. Proceedings of the National Academy of Sciences of USA. 106 (27): pp. 10907-10911.
    Source Title
    Proceedings of the National Academy of Sciences of USA
    DOI
    10.1073/pnas.0812942106
    ISSN
    00278424
    URI
    http://hdl.handle.net/20.500.11937/4149
    Collection
    • Curtin Research Publications
    Abstract

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class.

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