Nanoimprint induced electrical type conversion in HgCdTe

Martyniuk, M.; Umana-Membreno, G.; Sewell, R.; Westerhout, R.; Musca, C.; Dell, J.; Antoszewski, J.; Faraone, L.; Macintyre, D.; Thoms, S.; Ironside, Charlie

doi:10.1109/COMMAD.2010.5699723

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Authors

Martyniuk, M.

Umana-Membreno, G.

Sewell, R.

Westerhout, R.

Musca, C.

Dell, J.

Antoszewski, J.

Faraone, L.

Macintyre, D.

Thoms, S.

Ironside, Charlie

Date

2010

Type

Conference Paper

Metadata

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Citation

Martyniuk, M. and Umana-Membreno, G. and Sewell, R. and Westerhout, R. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2010. Nanoimprint induced electrical type conversion in HgCdTe, pp. 17-18.

Source Title

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

DOI

10.1109/COMMAD.2010.5699723

ISBN

9781424473328

School

Department of Physics and Astronomy

URI

http://hdl.handle.net/20.500.11937/42415

Collection

Curtin Research Publications

Abstract

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting. © 2010 IEEE.