Nanoimprint induced electrical type conversion in HgCdTe
Fulltext not available
MetadataShow full item record
We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting. © 2010 IEEE.
Martyniuk, M. and Umana-Membreno, G. and Sewell, R. and Westerhout, R. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2010. Nanoimprint induced electrical type conversion in HgCdTe, pp. 17-18.
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Department of Physics and Astronomy