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dc.contributor.authorMartyniuk, M.
dc.contributor.authorUmana-Membreno, G.
dc.contributor.authorSewell, R.
dc.contributor.authorWesterhout, R.
dc.contributor.authorMusca, C.
dc.contributor.authorDell, J.
dc.contributor.authorAntoszewski, J.
dc.contributor.authorFaraone, L.
dc.contributor.authorMacintyre, D.
dc.contributor.authorThoms, S.
dc.contributor.authorIronside, Charlie
dc.date.accessioned2017-01-30T14:59:27Z
dc.date.available2017-01-30T14:59:27Z
dc.date.created2016-09-12T08:36:56Z
dc.date.issued2010
dc.identifier.citationMartyniuk, M. and Umana-Membreno, G. and Sewell, R. and Westerhout, R. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2010. Nanoimprint induced electrical type conversion in HgCdTe, pp. 17-18.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/42415
dc.identifier.doi10.1109/COMMAD.2010.5699723
dc.description.abstract

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting. © 2010 IEEE.

dc.titleNanoimprint induced electrical type conversion in HgCdTe
dc.typeConference Paper
dcterms.source.startPage17
dcterms.source.endPage18
dcterms.source.titleConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dcterms.source.seriesConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dcterms.source.isbn9781424473328
curtin.departmentDepartment of Physics and Astronomy
curtin.accessStatusFulltext not available


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