Nanoimprint induced electrical type conversion in HgCdTe
| dc.contributor.author | Martyniuk, M. | |
| dc.contributor.author | Umana-Membreno, G. | |
| dc.contributor.author | Sewell, R. | |
| dc.contributor.author | Westerhout, R. | |
| dc.contributor.author | Musca, C. | |
| dc.contributor.author | Dell, J. | |
| dc.contributor.author | Antoszewski, J. | |
| dc.contributor.author | Faraone, L. | |
| dc.contributor.author | Macintyre, D. | |
| dc.contributor.author | Thoms, S. | |
| dc.contributor.author | Ironside, Charlie | |
| dc.date.accessioned | 2017-01-30T14:59:27Z | |
| dc.date.available | 2017-01-30T14:59:27Z | |
| dc.date.created | 2016-09-12T08:36:56Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Martyniuk, M. and Umana-Membreno, G. and Sewell, R. and Westerhout, R. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2010. Nanoimprint induced electrical type conversion in HgCdTe, pp. 17-18. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/42415 | |
| dc.identifier.doi | 10.1109/COMMAD.2010.5699723 | |
| dc.description.abstract |
We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting. © 2010 IEEE. | |
| dc.title | Nanoimprint induced electrical type conversion in HgCdTe | |
| dc.type | Conference Paper | |
| dcterms.source.startPage | 17 | |
| dcterms.source.endPage | 18 | |
| dcterms.source.title | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | |
| dcterms.source.series | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | |
| dcterms.source.isbn | 9781424473328 | |
| curtin.department | Department of Physics and Astronomy | |
| curtin.accessStatus | Fulltext not available |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||