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    Fine tuning of compact ZnO blocking layers for enhanced photovoltaic performance in ZnO based DSSCs: a detailed insight using ß recombination, EIS, OCVD and IMVS techniques

    248453.pdf (1.337Mb)
    Access Status
    Open access
    Authors
    Sasidharan, S.
    Soman, S.
    Pradhan, S.
    Unni, K.
    Mohamed, A.
    Nair, Balagopal
    Saraswathy, H.
    Date
    2017
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Sasidharan, S. and Soman, S. and Pradhan, S. and Unni, K. and Mohamed, A. and Nair, B. and Saraswathy, H. 2017. Fine tuning of compact ZnO blocking layers for enhanced photovoltaic performance in ZnO based DSSCs: a detailed insight using ß recombination, EIS, OCVD and IMVS techniques. New Journal of Chemistry. 41 (3): pp. 1007-1016.
    Source Title
    New Journal of Chemistry
    DOI
    10.1039/c6nj03098j
    ISSN
    1144-0546
    School
    Nanochemistry Research Institute
    URI
    http://hdl.handle.net/20.500.11937/50990
    Collection
    • Curtin Research Publications
    Abstract

    The electron-hole recombination and back electron flow at the conducting oxide-mesoporous film interface in dye-sensitized solar cells (DSSCs) are addressed primarily by the use of pre-blocking layers. Herein, the effects of zinc oxide (ZnO) blocking layers (BLs) on the photovoltaic performance of ZnO based DSSCs are investigated in detail using electrochemical impedance spectroscopy (EIS), open circuit voltage decay (OCVD) and intensity modulated photovoltage spectroscopic (IMVS) techniques. BLs of varying thicknesses obtained by a low temperature solution process provided uniform surface coverage of nanosized ZnO particles over FTO. Devices with optimized ZnO blocking layer thickness (12 nm) lead to improved performance (efficiency 2.57%) in comparison to the devices fabricated using bare FTO (1.27%) by suppressing interfacial recombination at the FTO/ZnO interface thereby improving the lifetime leading to better performance.

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