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dc.contributor.authorBristow, J.
dc.contributor.authorButler, K.
dc.contributor.authorSvane, K.
dc.contributor.authorGale, Julian
dc.contributor.authorWalsh, A.
dc.date.accessioned2017-04-28T13:58:49Z
dc.date.available2017-04-28T13:58:49Z
dc.date.created2017-04-28T09:06:02Z
dc.date.issued2017
dc.identifier.citationBristow, J. and Butler, K. and Svane, K. and Gale, J. and Walsh, A. 2017. Chemical bonding at the metal-organic framework/metal oxide interface: Simulated epitaxial growth of MOF-5 on rutile TiO2. Journal of Materials Chemistry A. 5 (13): pp. 6226-6232.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/52439
dc.identifier.doi10.1039/c7ta00356k
dc.description.abstract

Thin-film deposition of metal-organic frameworks (MOFs) is now possible, but little is known regarding the microscopic nature of hybrid hetero-interfaces. We first assess optimal substrate combinations for coherent epitaxy of MOFs based on a lattice matching procedure. We then perform a detailed quantum mechanical/molecular mechanical investigation of the growth of (011) MOF-5 on (110) rutile TiO2. The lowest energy interface configuration involves a bidentate connection between two TiO6 polyhedra with deprotonation of terephthalic acid to a bridging oxide site. The epitaxy of MOF-5 on the surface of TiO2 was modelled with a forcefield parameterised to quantum chemical binding energies and bond lengths. The microscopic interface structure and chemical bonding characteristics are expected to be relevant to other hybrid framework-oxide combinations.

dc.publisherR S C Publications
dc.titleChemical bonding at the metal-organic framework/metal oxide interface: Simulated epitaxial growth of MOF-5 on rutile TiO2
dc.typeJournal Article
dcterms.source.volume5
dcterms.source.number13
dcterms.source.startPage6226
dcterms.source.endPage6232
dcterms.source.issn2050-7488
dcterms.source.titleJournal of Materials Chemistry A
curtin.departmentDepartment of Chemistry
curtin.accessStatusOpen access


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