Focused Ion beam implantation of diamond

McKenzie, W.; Quadir, Md Zakaria; Gass, M.; Munroe, P.

doi:10.1016/j.diamond.2011.06.022

Access Status

Fulltext not available

Authors

McKenzie, W.

Quadir, Md Zakaria

Gass, M.

Munroe, P.

Date

2011

Type

Journal Article

Metadata

Show full item record

Citation

McKenzie, W. and Quadir, M.Z. and Gass, M. and Munroe, P. 2011. Focused Ion beam implantation of diamond. Diamond and Related Materials. 20 (8): pp. 1125-1128.

Source Title

Diamond and Related Materials

DOI

10.1016/j.diamond.2011.06.022

ISSN

0925-9635

School

John de Laeter Centre

URI

http://hdl.handle.net/20.500.11937/54354

Collection

Curtin Research Publications

Abstract

The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which, at higher doses, can swell up to 31% its original volume and accommodate a significant quantity of gallium. Electron energy loss and energy dispersive X-ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen contained within a stable amorphous carbon structure. © 2011 Elsevier B.V. All rights reserved.