Focused Ion beam implantation of diamond
| dc.contributor.author | McKenzie, W. | |
| dc.contributor.author | Quadir, Md Zakaria | |
| dc.contributor.author | Gass, M. | |
| dc.contributor.author | Munroe, P. | |
| dc.date.accessioned | 2017-07-27T05:20:40Z | |
| dc.date.available | 2017-07-27T05:20:40Z | |
| dc.date.created | 2017-07-26T11:11:20Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | McKenzie, W. and Quadir, M.Z. and Gass, M. and Munroe, P. 2011. Focused Ion beam implantation of diamond. Diamond and Related Materials. 20 (8): pp. 1125-1128. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/54354 | |
| dc.identifier.doi | 10.1016/j.diamond.2011.06.022 | |
| dc.description.abstract |
The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which, at higher doses, can swell up to 31% its original volume and accommodate a significant quantity of gallium. Electron energy loss and energy dispersive X-ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen contained within a stable amorphous carbon structure. © 2011 Elsevier B.V. All rights reserved. | |
| dc.publisher | Elsevier | |
| dc.title | Focused Ion beam implantation of diamond | |
| dc.type | Journal Article | |
| dcterms.source.volume | 20 | |
| dcterms.source.number | 8 | |
| dcterms.source.startPage | 1125 | |
| dcterms.source.endPage | 1128 | |
| dcterms.source.issn | 0925-9635 | |
| dcterms.source.title | Diamond and Related Materials | |
| curtin.department | John de Laeter Centre | |
| curtin.accessStatus | Fulltext not available |
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