Analysis of nano-grating-assisted light absorption enhancement in metal-semiconductor-metal photodetectors patterned using focused ion-beam lithography
dc.contributor.author | Das, Narottam | |
dc.contributor.author | Karar, A. | |
dc.contributor.author | Vasiliev, M. | |
dc.contributor.author | Tan, C. | |
dc.contributor.author | Alameh, K. | |
dc.contributor.author | Lee, Y. | |
dc.date.accessioned | 2017-08-24T02:17:28Z | |
dc.date.available | 2017-08-24T02:17:28Z | |
dc.date.created | 2017-08-23T07:21:39Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Das, N. and Karar, A. and Vasiliev, M. and Tan, C. and Alameh, K. and Lee, Y. 2011. Analysis of nano-grating-assisted light absorption enhancement in metal-semiconductor-metal photodetectors patterned using focused ion-beam lithography. Optics Communications. 284 (6): pp. 1694-1700. | |
dc.identifier.uri | http://hdl.handle.net/20.500.11937/55219 | |
dc.identifier.doi | 10.1016/j.optcom.2010.11.065 | |
dc.description.abstract |
We present finite-difference time-domain (FDTD) analysis results of light absorption enhancement factor dependence on the profile shape of nano-gratings etched into the surfaces of metal-semiconductor-metal photodetector (MSM-PD) structures. The MSM-PDs patterned by nano-gratings are optimized geometrically, improving the light absorption near the design wavelength through plasmon-assisted electric field concentration effects. FDTD simulation results show about 50 times light absorption enhancement prediction for 850 nm light due to improved optical signal propagation through the nano-gratings in comparison with the conventional MSM-PD designs employing only a subwavelength aperture. We also report on the nano-grating profile shapes obtained typically in our experiments using focused ion-beam lithography and discuss the dependency of light absorption enhancement on the geometric parameters of nano-gratings inscribed into MSM-PDs. © 2010 Elsevier B.V. All rights reserved. | |
dc.title | Analysis of nano-grating-assisted light absorption enhancement in metal-semiconductor-metal photodetectors patterned using focused ion-beam lithography | |
dc.type | Journal Article | |
dcterms.source.volume | 284 | |
dcterms.source.number | 6 | |
dcterms.source.startPage | 1694 | |
dcterms.source.endPage | 1700 | |
dcterms.source.issn | 0030-4018 | |
dcterms.source.title | Optics Communications | |
curtin.department | Department of Electrical and Computer Engineering | |
curtin.accessStatus | Fulltext not available |
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