Show simple item record

dc.contributor.authorAli, S.
dc.contributor.authorWolfs, Peter
dc.date.accessioned2017-08-24T02:19:56Z
dc.date.available2017-08-24T02:19:56Z
dc.date.created2017-08-23T07:21:40Z
dc.date.issued2016
dc.identifier.citationAli, S. and Wolfs, P. 2016. An improved four step commutation process for silicon carbide based matrix converters.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/55701
dc.identifier.doi10.1109/AUPEC.2016.07749294
dc.description.abstract

© 2016 IEEE. This paper describes an improved matrix converter (MC) commutation process. The paper reviews existing commutation methods including the overlap and dead-band approaches and then two-, three- and four-step commutation processes. Their limitations are discussed and an improved fourstep commutation process is proposed. The paper categorises switches as one or two active devices, or degree of freedom (DOF), implementations. The paper focuses on a two degrees of freedom SiC MOSFET switch for a four by four generalised MC implementation. The commutation process is summarised using two- three- and four-leg state machine diagrams. Experimental results are presented for Si-based MOSFETs and SiC-based MOSFETs switches using the four-step two-leg commutation process.

dc.titleAn improved four step commutation process for silicon carbide based matrix converters
dc.typeConference Paper
dcterms.source.titleProceedings of the 2016 Australasian Universities Power Engineering Conference, AUPEC 2016
dcterms.source.seriesProceedings of the 2016 Australasian Universities Power Engineering Conference, AUPEC 2016
dcterms.source.isbn9781509014057
curtin.departmentDepartment of Electrical and Computer Engineering
curtin.accessStatusFulltext not available


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record