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dc.contributor.authorDas, Narottam
dc.contributor.authorKarar, A.
dc.contributor.authorTan, C.
dc.contributor.authorVasiliev, M.
dc.contributor.authorAlameh, K.
dc.contributor.authorLee, Y.
dc.date.accessioned2017-08-24T02:22:50Z
dc.date.available2017-08-24T02:22:50Z
dc.date.created2017-08-23T07:21:39Z
dc.date.issued2011
dc.identifier.citationDas, N. and Karar, A. and Tan, C. and Vasiliev, M. and Alameh, K. and Lee, Y. 2011. Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings. Pure and Applied Chemistry. 83 (11): pp. 2107-2113.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/56212
dc.identifier.doi10.1351/PAC-CON-11-01-13
dc.description.abstract

We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs. © 2011 IUPAC.

dc.publisherInternational Union of Pure and Applied Chemistry
dc.titleMetal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings
dc.typeJournal Article
dcterms.source.volume83
dcterms.source.number11
dcterms.source.startPage2107
dcterms.source.endPage2113
dcterms.source.issn0033-4545
dcterms.source.titlePure and Applied Chemistry
curtin.departmentDepartment of Electrical and Computer Engineering
curtin.accessStatusFulltext not available


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