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    Numerical modeling of the temporal response of back-gated metal-semiconductor-metal photodetector in an equilibrium condition

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    Authors
    Habibpour, A.
    Das, Narottam
    Mashayekhi, H.
    Date
    2014
    Type
    Journal Article
    
    Metadata
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    Citation
    Habibpour, A. and Das, N. and Mashayekhi, H. 2014. Numerical modeling of the temporal response of back-gated metal-semiconductor-metal photodetector in an equilibrium condition. Iranian Journal of Science and Technology, Transaction A: Science. 38 (4): pp. 441-444.
    Source Title
    Iranian Journal of Science and Technology, Transaction A: Science
    ISSN
    1028-6276
    School
    Department of Electrical and Computer Engineering
    URI
    http://hdl.handle.net/20.500.11937/6128
    Collection
    • Curtin Research Publications
    Abstract

    © 2014, Shiraz University. All rights reserved. We have simulated the carrier concentration and temporal response characteristics of a Back-Gated Metal- Semiconductor-Metal (BG-MSM) photodetector in one dimension as a function of optical pulse position on the active region in an equilibrium condition (without bias voltage to the photodetector). We have adopted a nonlinear ambipolar transport model to simulate the behavior of photo-generated carriers in the active region of the BG-MSM photodetector. From the simulation results, it is observed that for optical pulse positions in the cathode region, the magnitude of the response current is exactly the same but opposite that of the anode region. The response of the photodetector is zero when a pulse is positioned at the center of the active region. This important feature of the device could make it attractive for micro-scale positioning of highly sensitive instruments. Our simulation results agreed well with the experimental results.

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