Carbon diffusion in alumina from carbon and Ti2AlC thin films
Abstract
Carbon diffusion is observed in single crystal a-Al2O3 substrates from carbon and Ti2AlC thin filmssynthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substratetemperatures of 570 C and above. The diffusion coefficient of carbon in a-Al2O3 is estimated to beof the order 3 1013 cm2/s for deposition temperatures in the 570–770 C range by examiningelastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriatediffusion barrier may be useful when depositing carbon containing thin films on a-Al2O3 substratesat high temperatures.
Citation
Guenette, M. and Tucker, M. and Ionescu, M. and Bilek, M. and McKenzie, D. 2011. Carbon diffusion in alumina from carbon and Ti2AlC thin films. Journal of Applied Physics. 109.
Source Title
Journal of Applied Physics
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