Carbon diffusion in alumina from carbon and Ti2AlC thin films
| dc.contributor.author | Guenette, M. | |
| dc.contributor.author | Tucker, Mark | |
| dc.contributor.author | Ionescu, M. | |
| dc.contributor.author | Bilek, M. | |
| dc.contributor.author | McKenzie, D. | |
| dc.date.accessioned | 2017-01-30T10:53:56Z | |
| dc.date.available | 2017-01-30T10:53:56Z | |
| dc.date.created | 2014-11-19T01:13:30Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Guenette, M. and Tucker, M. and Ionescu, M. and Bilek, M. and McKenzie, D. 2011. Carbon diffusion in alumina from carbon and Ti2AlC thin films. Journal of Applied Physics. 109. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/6561 | |
| dc.identifier.doi | 10.1063/1.3573490 | |
| dc.description.abstract |
Carbon diffusion is observed in single crystal a-Al2O3 substrates from carbon and Ti2AlC thin filmssynthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substratetemperatures of 570 C and above. The diffusion coefficient of carbon in a-Al2O3 is estimated to beof the order 3 1013 cm2/s for deposition temperatures in the 570–770 C range by examiningelastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriatediffusion barrier may be useful when depositing carbon containing thin films on a-Al2O3 substratesat high temperatures. | |
| dc.publisher | American Institute of Physics | |
| dc.title | Carbon diffusion in alumina from carbon and Ti2AlC thin films | |
| dc.type | Journal Article | |
| dcterms.source.volume | 109 | |
| dcterms.source.issn | 0021-8979 | |
| dcterms.source.title | Journal of Applied Physics | |
| curtin.accessStatus | Fulltext not available |