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dc.contributor.authorBeardmore, Joshua
dc.contributor.authorPalmer, A.
dc.contributor.authorFabrie, C.
dc.contributor.authorVan Leeuwen, K.
dc.contributor.authorSang, R.
dc.date.accessioned2018-04-30T02:40:29Z
dc.date.available2018-04-30T02:40:29Z
dc.date.created2018-04-16T07:41:35Z
dc.date.issued2012
dc.identifier.citationBeardmore, J. and Palmer, A. and Fabrie, C. and Van Leeuwen, K. and Sang, R. 2012. Characterisation of the growth of a carbonaceous film on silicon. Thin Solid Films. 520 (7): pp. 2414-2417.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/66387
dc.identifier.doi10.1016/j.tsf.2011.09.073
dc.description.abstract

In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems. © 2011 Elsevier B.V. All rights reserved.

dc.publisherElsevier S.A.
dc.titleCharacterisation of the growth of a carbonaceous film on silicon
dc.typeJournal Article
dcterms.source.volume520
dcterms.source.number7
dcterms.source.startPage2414
dcterms.source.endPage2417
dcterms.source.issn0040-6090
dcterms.source.titleThin Solid Films
curtin.departmentSchool of Earth and Planetary Sciences (EPS)
curtin.accessStatusFulltext not available


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