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dc.contributor.authorRaj, N.
dc.contributor.authorSingh, Ashutosh Kumar
dc.contributor.authorGupta, A.
dc.date.accessioned2017-01-30T10:55:36Z
dc.date.available2017-01-30T10:55:36Z
dc.date.created2015-06-22T20:00:44Z
dc.date.issued2014
dc.identifier.citationRaj, N. and Singh, A.K. and Gupta, A. 2014. Low-voltage bulk-driven self-biased ascode current mirror with bandwidth enhancement. Electronics Letters. 50 (1): pp. 23-25.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/6790
dc.identifier.doi10.1049/el.2013.3600
dc.description.abstract

A low-voltage, high-performance, self-biased, cascode bulk-driven current mirror is proposed. Using the bulk-driven technique together with quasi-floating gate metal-oxide semiconductor transistors improves the overall circuit performance. A small-signal analysis validates the advantage of such an approach over conventional bulk-driven circuits. The proposed circuit has four times smaller input resistance and extended bandwidth by about three times over the same configuration using the conventional bulk mechanism. The circuit is simulated on UMC 0.18 μm technology node with the help of HSpice.

dc.publisherStuart Govan
dc.titleLow-voltage bulk-driven self-biased ascode current mirror with bandwidth enhancement
dc.typeJournal Article
dcterms.source.volume50
dcterms.source.number1
dcterms.source.startPage23
dcterms.source.endPage25
dcterms.source.issn0013-5194
dcterms.source.titleElectronics Letters
curtin.departmentCurtin Sarawak
curtin.accessStatusFulltext not available


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