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    Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring

    70089.pdf (2.710Mb)
    Access Status
    Open access
    Authors
    Vogel, Yan
    Zhang, Jinyang
    Darwish, Nadim
    Ciampi, Simone
    Date
    2018
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Vogel, Y. and Zhang, J. and Darwish, N. and Ciampi, S. 2018. Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring. ACS Nano. 12 (8): pp. 8071–8080.
    Source Title
    ACS Nano
    DOI
    10.1021/acsnano.8b02934
    Additional URLs
    https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934
    ISSN
    1936-0851
    School
    School of Molecular and Life Sciences (MLS)
    Funding and Sponsorship
    http://purl.org/au-research/grants/arc/DE160100732
    http://purl.org/au-research/grants/arc/DE160101101
    URI
    http://hdl.handle.net/20.500.11937/69877
    Collection
    • Curtin Research Publications
    Abstract

    Here we show that within a single polyhedral metal oxide nanoparticle a nanometer-scale lateral or vertical sliding of a small metal top contact (e.g., <50 nm) leads to a 10-fold change in current rectification ratios. Electron tunnelling imaging and constant-force current-potential analysis in atomic force microscopy demonstrate that within an individual p-n rectifier (a Cu2O nanocrystal on silicon) the degree of current asymmetry can be modulated predictably by a set of geometric considerations. We demonstrate the concept of a single nanoscale entity displaying an in-built range of discrete electrical signatures and address fundamental questions in the direction of "landing" contacts in single-particle diodes. This concept is scalable to large 2D arrays, up to millimetres in size, with implications in the design and understanding of nanoparticle circuitry.

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