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Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing

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Authors
Chen, B.
Wang, J.
Gao, Q.
Chen, Y.
Liao, X.
Lu, Chunsheng
Tan, H.
Mai, Y.
Zou, J.
Ringer, S.
Gao, H.
Jagadish, C.
Date
2013
Type
Journal Article

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Chen, Bin and Wang, J and Gao, Qiang and Chen, Yujie and Liao, Xiaozhou and Lu, Chunsheng and Tan, Hark and Mai, Yiu-Wing and Zou, Jin and Ringer, Simon and Gao, Huajian and Jagadish, Chennupati. 2013. Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing. Nano Letters. 13 (9): pp. 4369-4373.
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Nano Letters: a journal dedicated to nanoscience and nanotechnology
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Abstract

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.