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dc.contributor.authorChen, B.
dc.contributor.authorWang, J.
dc.contributor.authorGao, Q.
dc.contributor.authorChen, Y.
dc.contributor.authorLiao, X.
dc.contributor.authorLu, Chunsheng
dc.contributor.authorTan, H.
dc.contributor.authorMai, Y.
dc.contributor.authorZou, J.
dc.contributor.authorRinger, S.
dc.contributor.authorGao, H.
dc.contributor.authorJagadish, C.
dc.identifier.citationChen, Bin and Wang, J and Gao, Qiang and Chen, Yujie and Liao, Xiaozhou and Lu, Chunsheng and Tan, Hark and Mai, Yiu-Wing and Zou, Jin and Ringer, Simon and Gao, Huajian and Jagadish, Chennupati. 2013. Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing. Nano Letters. 13 (9): pp. 4369-4373.

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

dc.publisherAmerican Chemical Society
dc.subjecttransmission electron microscopy
dc.subjectin situ deformation
dc.subjectstacking fault
dc.subjectGaAs nanowires
dc.subjectmolecular dynamics
dc.titleStrengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing
dc.typeJournal Article
dcterms.source.titleNano Letters: a journal dedicated to nanoscience and nanotechnology
curtin.accessStatusFulltext not available

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