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dc.contributor.authorMüller, M.
dc.contributor.authorSaxey, David
dc.contributor.authorSmith, G.
dc.contributor.authorGault, B.
dc.date.accessioned2017-01-30T10:58:14Z
dc.date.available2017-01-30T10:58:14Z
dc.date.created2015-10-29T04:09:31Z
dc.date.issued2011
dc.identifier.citationMüller, M. and Saxey, D. and Smith, G. and Gault, B. 2011. Some aspects of the field evaporation behaviour of GaSb. Ultramicroscopy. 111 (6): pp. 487-492.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/7183
dc.identifier.doi10.1016/j.ultramic.2010.11.019
dc.description.abstract

In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W, studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material.

dc.titleSome aspects of the field evaporation behaviour of GaSb
dc.typeJournal Article
dcterms.source.volume111
dcterms.source.number6
dcterms.source.startPage487
dcterms.source.endPage492
dcterms.source.issn0304-3991
dcterms.source.titleUltramicroscopy
curtin.departmentSchool of Electrical Engineering, Computing and Mathematical Sciences
curtin.accessStatusFulltext not available


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