Electric current dependent fracture in GaN piezoelectric semiconductor ceramics
|dc.identifier.citation||Qin, G. and Lu, C. and Zhang, X. and Zhao, M. 2018. Electric current dependent fracture in GaN piezoelectric semiconductor ceramics. materials. 11 (10): Article ID 2000.|
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications.
|dc.title||Electric current dependent fracture in GaN piezoelectric semiconductor ceramics|
|curtin.department||School of Civil and Mechanical Engineering (CME)|
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