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    Electric field-induced toughening in GaN piezoelectric semiconductor ceramics

    Access Status
    Fulltext not available
    Authors
    Qin, G.
    Zhang, X.
    Lu, Chunsheng
    Fan, C.
    Zhao, M.
    Date
    2019
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Qin, G. and Zhang, X. and Lu, C. and Fan, C. and Zhao, M. 2019. Electric field-induced toughening in GaN piezoelectric semiconductor ceramics. Ceramics International. 45 (5): pp. 6589-6593.
    Source Title
    Ceramics International
    DOI
    10.1016/j.ceramint.2018.12.143
    ISSN
    0272-8842
    School
    School of Civil and Mechanical Engineering (CME)
    URI
    http://hdl.handle.net/20.500.11937/74479
    Collection
    • Curtin Research Publications
    Abstract

    In this paper, the effect of an applied electric field on fracture toughness of polarized GaN piezoelectric semiconductor ceramics was studied by using experimental and numerical methods. The results show that fracture toughness increases by 22% under a field intensity of 0.83 kV cm-1, and with further increase of the electrical filed, fracture toughness remains unchanged. This is completely different from the fracture characteristics of traditional piezoelectric ceramics that is thought to decrease with an applied electric field. The reason for such a difference is attributed to the redistribution of free electrons. It is expected that this finding will be instructive to the reliability design of piezoelectric semiconductor structures and devices.

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