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    Annealing induced microstructure engineering of antimony tri-selenide thin films

    Access Status
    Fulltext not available
    Authors
    Haque, F.
    Elumalai, Naveen Kumar
    Wright, M.
    Mahmud, M.
    Wang, D.
    Upama, M.
    Xu, C.
    Uddin, A.
    Date
    2018
    Type
    Journal Article
    
    Metadata
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    Citation
    Haque, F. and Elumalai, N.K. and Wright, M. and Mahmud, M. and Wang, D. and Upama, M. and Xu, C. et al. 2018. Annealing induced microstructure engineering of antimony tri-selenide thin films. Materials Research Bulletin. 99: pp. 232-238.
    Source Title
    Materials Research Bulletin
    DOI
    10.1016/j.materresbull.2017.11.014
    ISSN
    0025-5408
    URI
    http://hdl.handle.net/20.500.11937/74119
    Collection
    • Curtin Research Publications
    Abstract

    The presented work demonstrates the effect of annealing on the structural, surface morphology and optical properties of Antimony Triselenide (Sb2Se3) thin films deposited by thermal evaporation. Two sets of thin films of Sb2Se3 were grown on soda lime glass (SLG) substrates by thermal evaporation with and without substrate heating. Both sets of films were then annealed at three distinct temperatures (100 °C, 200 °C and 300 °C) to study the effects of annealing on the microstructure. Analysis using XRD (X-Ray Diffraction) characterization revealed that the as-deposited films without substrate heating exhibit an amorphous nature, whereas the films grown with concurrent substrate heating are polycrystalline with orthorhombic structure. The films annealed at high temperature with concurrent substrate heating possess smooth and continuous grain morphologies. The effect of annealing was also found to have significant impact on the band gap and optical properties of the Sb2Se3 thin films.

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