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    Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control

    Access Status
    Fulltext not available
    Authors
    Sun, Xiao
    Parish, Giacinta
    Keating, Adrian
    Date
    2017
    Type
    Journal Article
    
    Metadata
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    Citation
    Sun, X. and Parish, G. and Keating, A. 2017. Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control. Journal of Micromechanics and Microengineering. 27 (4): pp. 044001.
    Source Title
    Journal of Micromechanics and Microengineering
    DOI
    10.1088/1361-6439/aa556c
    Faculty
    Faculty of Science and Engineering
    School
    John de Laeter Centre (JdLC)
    URI
    http://hdl.handle.net/20.500.11937/79812
    Collection
    • Curtin Research Publications
    Abstract

    All-mesoporous silicon microstructures were released with standard micromachining processes. The extremely high porosity of the films allows control of the mechanical properties as well as providing a platform material for devices with extremely large surface area. To pattern and release devices from these highly porous structural layers, pore filling, photoresist mask adhesion and electropolishing techniques were developed. The internal stress of porous silicon was characterized under repeated thermal annealing and HF immersion treatments, allowing a stable, slightly tensile stress of 2.0  ±  0.4 MPa to be achieved. A method to independently control the stress gradient induced curvature in the porous MEMS devices was developed, which achieved released PS structures that were flat to within 78 nm over a range of 100 µm. This is the first time that fully released, stress gradient adjusted all-mesoporous-silicon structures have been reported.

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