An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

Ding, Y.; Meriggi, L.; Steer, M.; Bulashevich, K.; Thayne, I.; MacGregor, C.; Sorel, M.; Ironside, Charlie

doi:10.1109/COMMAD.2014.7038668

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Authors

Ding, Y.

Meriggi, L.

Steer, M.

Bulashevich, K.

Thayne, I.

MacGregor, C.

Sorel, M.

Ironside, Charlie

Date

2015

Type

Conference Paper

Metadata

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Citation

Ding, Y. and Meriggi, L. and Steer, M. and Bulashevich, K. and Thayne, I. and MacGregor, C. and Sorel, M. et al. 2015. An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells, pp. 124-126: Institute of Electrical and Electronics Engineers Inc..

Source Title

2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

DOI

10.1109/COMMAD.2014.7038668

ISBN

9781479968671

School

Department of Physics and Astronomy

URI

http://hdl.handle.net/20.500.11937/8066

Collection

Curtin Research Publications

Abstract

Mid-mfrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.