Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm

Phelan, R. and Slight, T. and Kelly, B. and O'Carroll, J. and McKee, A. and Revin, D. and Zhang, S. et al. 2010. Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm. IEEE Photonics Technology Letters. 22 (17): pp. 1273-1275.

Source Title

IEEE Photonics Technology Letters

DOI

10.1109/LPT.2010.2053529

ISSN

1041-1135

School

Department of Physics and Astronomy

URI

http://hdl.handle.net/20.500.11937/8324

Collection

Curtin Research Publications

Abstract

Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 µm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K < T <303 K. © 2006 IEEE.