Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
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Authors
Phelan, R.
Slight, T.
Kelly, B.
O'Carroll, J.
McKee, A.
Revin, D.
Zhang, S.
Krysa, A.
Kennedy, K.
Cockburn, J.
Ironside, Charlie
Meredith, W.
O'Gorman, J.
Date
2010Type
Journal Article
Metadata
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Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 µm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K < T <303 K. © 2006 IEEE.
Citation
Phelan, R. and Slight, T. and Kelly, B. and O'Carroll, J. and McKee, A. and Revin, D. and Zhang, S. et al. 2010. Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm. IEEE Photonics Technology Letters. 22 (17): pp. 1273-1275.
Source Title
IEEE Photonics Technology Letters
Department
Department of Physics and Astronomy