Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm

Abstract

Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 µm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K < T <303 K. © 2006 IEEE.