Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

Reusch, T.; Radny, M.; Smith, P.; Warschkow, O.; Marks, Nigel; Curson, N.; McKenzie, D.; Simmons, M.

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Authors

Reusch, T.

Radny, M.

Smith, P.

Warschkow, O.

Marks, Nigel

Curson, N.

McKenzie, D.

Simmons, M.

Date

2007

Type

Journal Article

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Citation

Reusch, T. and Radny, M. and Smith, P. and Warschkow, O. and Marks, N. and Curson, N. and McKenzie, D. et al. 2007. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. Journal of Physical Chemistry. 111: pp. 6428-6433.

Source Title

Journal of Physical Chemistry