Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds

dc.contributor.author	Reusch, T.
dc.contributor.author	Radny, M.
dc.contributor.author	Smith, P.
dc.contributor.author	Warschkow, O.
dc.contributor.author	Marks, Nigel
dc.contributor.author	Curson, N.
dc.contributor.author	McKenzie, D.
dc.contributor.author	Simmons, M.
dc.date.accessioned	2017-01-30T11:06:38Z
dc.date.available	2017-01-30T11:06:38Z
dc.date.created	2014-10-08T03:10:53Z
dc.date.issued	2007
dc.identifier.citation	Reusch, T. and Radny, M. and Smith, P. and Warschkow, O. and Marks, N. and Curson, N. and McKenzie, D. et al. 2007. Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds. Journal of Physical Chemistry. 111: pp. 6428-6433.
dc.identifier.uri	http://hdl.handle.net/20.500.11937/8440
dc.publisher	American Chemical Society
dc.title	Single Phosphorus Atoms in Si(001): Doping-Induced Charge Transfer into Isolated Si Dangling Bonds
dc.type	Journal Article
dcterms.source.volume	111
dcterms.source.startPage	6428
dcterms.source.endPage	6433
dcterms.source.issn	0022-3654
dcterms.source.title	Journal of Physical Chemistry
curtin.accessStatus	Fulltext not available