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dc.contributor.authorHurtado, C.
dc.contributor.authorMacGregor, M.
dc.contributor.authorChen, K.
dc.contributor.authorCiampi, Simone
dc.date.accessioned2024-10-01T05:03:39Z
dc.date.available2024-10-01T05:03:39Z
dc.date.issued2024
dc.identifier.citationHurtado, C. and MacGregor, M. and Chen, K. and Ciampi, S. 2024. Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon. Advanced Science. : pp. e2403524-.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/95988
dc.identifier.doi10.1002/advs.202403524
dc.description.abstract

Nearly four decades have passed since IBM scientists pioneered atomic force microscopy (AFM) by merging the principles of a scanning tunneling microscope with the features of a stylus profilometer. Today, electrical AFM modes are an indispensable asset within the semiconductor and nanotechnology industries, enabling the characterization and manipulation of electrical properties at the nanoscale. However, electrical AFM measurements suffer from reproducibility issues caused, for example, by surface contaminations, Joule heating, and hard-to-minimize tip drift and tilt. Using as experimental system nanoscale Schottky diodes assembled on oxide-free silicon crystals of precisely defined surface chemistry, it is revealed that voltage-dependent adhesion forces lead to significant rotation of the AFM platinum tip. The electrostatics-driven tip rotation causes a strain gradient on the silicon surface, which induces a flexoelectric reverse bias term. This directional flexoelectric internal-bias term adds to the external (instrumental) bias, causing both an increased diode leakage as well as a shift of the diode knee voltage to larger forward biases. These findings will aid the design and characterization of silicon-based devices, especially those that are deliberately operated under large strain or shear, such as in emerging energy harvesting technologies including Schottky-based triboelectric nanogenerators (TENGs).

dc.languageeng
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/DP220100553
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/FT190100148
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/FT200100301
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectSchottky diodes
dc.subjectflexoelectricity
dc.subjectsilicon
dc.subjectsurface chemistry
dc.subjecttriboelectricity
dc.titleSchottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon
dc.typeJournal Article
dcterms.source.startPagee2403524
dcterms.source.issn2198-3844
dcterms.source.titleAdvanced Science
dc.date.updated2024-10-01T05:03:39Z
curtin.departmentSchool of Molecular and Life Sciences (MLS)
curtin.accessStatusOpen access
curtin.facultyFaculty of Science and Engineering
curtin.contributor.orcidCiampi, Simone [0000-0002-8272-8454]
curtin.contributor.researcheridCiampi, Simone [D-9129-2014]
dcterms.source.eissn2198-3844
curtin.contributor.scopusauthoridCiampi, Simone [21733701500]
curtin.repositoryagreementV3


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