Bending characteristics of a one-dimensional piezoelectric semiconductor curved beam

Abstract

A one-dimensional beam model with a curved longitudinal axis is established for piezoelectric semiconductors (PSCs) based on the first-order shear deformation theory and a small perturbation assumption of electron concentration. The PSC curved beam model is studied with one fixed end and a transverse force under the other end, and the analytical solutions of shear displacement, flexure displacement, electric potential, and electron concentration perturbation are derived using the differential operator method. The solutions of electromechanical fields are verified by degrading a curved beam into a straight one. According to numerical results, the distributions of electromechanical fields and effects of transverse force, initial electron concentration, and curvature radius are discussed on electromechanical fields. It is shown that the transverse force and curvature radius have an obvious influence on both the electrical and mechanical fields of the curved PSC beam, whereas the initial electron concentration mainly affects electrical quantities.