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    Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

    151016_26093_Applied Physics Letter 2010-97-212901_Huyong TIAN.pdf (454.7Kb)
    Access Status
    Open access
    Authors
    Wang, D.
    Chan, N.
    Choy, S.
    Tian, Hu-Yong
    Chan, L.
    Li, S
    Date
    2010
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Wang, D.Y. and Chan, N.Y. and Choy, S. and Tian, H.Y. and Chan, H.L.W. and Li, S. 2010. Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films. Applied Physics Letters. 97 (21): pp. 212901-1-212901-3.
    Source Title
    Applied Physics Letters
    DOI
    10.1063/1.3518484
    ISSN
    00036951
    School
    Department of Imaging and Applied Physics
    Remarks

    Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters. 97 (21): pp. 212901-1-212901-3 and may be found at http://dx.doi.org/10.1063/1.3518484.

    URI
    http://hdl.handle.net/20.500.11937/13019
    Collection
    • Curtin Research Publications
    Abstract

    Doping effects with respect to the electrical properties of morphotropic phase boundary Bi0.5Na0.50.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded LaAlO30.3Sr2AlTaO60.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 C/cm2 and a remanent piezoelectric coefficient d33f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.

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