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dc.contributor.authorWang, D.
dc.contributor.authorChan, N.
dc.contributor.authorChoy, S.
dc.contributor.authorTian, Hu-Yong
dc.contributor.authorChan, L.
dc.contributor.authorLi, S
dc.date.accessioned2017-01-30T11:34:15Z
dc.date.available2017-01-30T11:34:15Z
dc.date.created2011-01-13T20:02:41Z
dc.date.issued2010
dc.identifier.citationWang, D.Y. and Chan, N.Y. and Choy, S. and Tian, H.Y. and Chan, H.L.W. and Li, S. 2010. Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films. Applied Physics Letters. 97 (21): pp. 212901-1-212901-3.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/13019
dc.identifier.doi10.1063/1.3518484
dc.description.abstract

Doping effects with respect to the electrical properties of morphotropic phase boundary Bi0.5Na0.50.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded LaAlO30.3Sr2AlTaO60.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 C/cm2 and a remanent piezoelectric coefficient d33f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.

dc.publisherAmerican Institute of Physics
dc.titleEnhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
dc.typeJournal Article
dcterms.source.volume97
dcterms.source.startPage212901
dcterms.source.endPage1
dcterms.source.issn00036951
dcterms.source.titleApplied Physics Letters
curtin.note

Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters. 97 (21): pp. 212901-1-212901-3 and may be found at http://dx.doi.org/10.1063/1.3518484.

curtin.departmentDepartment of Imaging and Applied Physics
curtin.accessStatusOpen access


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