Electrical type conversion of p-type HgCdTe induced by nanoimprinting

Martyniuk, M.; Sewell, R.; Westerhout, R.; Umana-Membreno, G.; Musca, C.; Dell, J.; Antoszewski, J.; Faraone, L.; MacIntyre, D.; Thoms, S.; Ironside, Charlie

doi:10.1063/1.3582062

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Authors

Martyniuk, M.

Sewell, R.

Westerhout, R.

Umana-Membreno, G.

Musca, C.

Dell, J.

Antoszewski, J.

Faraone, L.

MacIntyre, D.

Thoms, S.

Ironside, Charlie

Date

2011

Type

Journal Article

Metadata

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Citation

Martyniuk, M. and Sewell, R. and Westerhout, R. and Umana-Membreno, G. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2011. Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics. 109 (9): 096102.

Source Title

Journal of Applied Physics

DOI

10.1063/1.3582062

ISSN

0021-8979

School

Department of Physics and Astronomy

URI

http://hdl.handle.net/20.500.11937/18270

Collection

Curtin Research Publications

Abstract

A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 m to 50 µm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.