Electrical type conversion of p-type HgCdTe induced by nanoimprinting

Martyniuk, M.; Sewell, R.; Westerhout, R.; Umana-Membreno, G.; Musca, C.; Dell, J.; Antoszewski, J.; Faraone, L.; MacIntyre, D.; Thoms, S.; Ironside, Charlie

doi:http://doi.org/10.1063/1.3582062

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Authors

Martyniuk, M.

Sewell, R.

Westerhout, R.

Umana-Membreno, G.

Musca, C.

Dell, J.

Antoszewski, J.

Faraone, L.

MacIntyre, D.

Thoms, S.

Ironside, Charlie

Date

2011

Type

Journal Article

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Abstract

A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 m to 50 µm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.

Citation

Martyniuk, M. and Sewell, R. and Westerhout, R. and Umana-Membreno, G. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2011. Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics. 109 (9): 096102.

Source Title

Journal of Applied Physics

URI

http://hdl.handle.net/20.500.11937/18270

DOI

http://doi.org/10.1063/1.3582062

Department

Department of Physics and Astronomy

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Research Papers