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    Electrical type conversion of p-type HgCdTe induced by nanoimprinting

    Access Status
    Fulltext not available
    Authors
    Martyniuk, M.
    Sewell, R.
    Westerhout, R.
    Umana-Membreno, G.
    Musca, C.
    Dell, J.
    Antoszewski, J.
    Faraone, L.
    MacIntyre, D.
    Thoms, S.
    Ironside, Charlie
    Date
    2011
    Type
    Journal Article
    
    Metadata
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    Citation
    Martyniuk, M. and Sewell, R. and Westerhout, R. and Umana-Membreno, G. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2011. Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics. 109 (9): 096102.
    Source Title
    Journal of Applied Physics
    DOI
    10.1063/1.3582062
    ISSN
    0021-8979
    School
    Department of Physics and Astronomy
    URI
    http://hdl.handle.net/20.500.11937/18270
    Collection
    • Curtin Research Publications
    Abstract

    A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 m to 50 µm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques.

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