Electrical type conversion of p-type HgCdTe induced by nanoimprinting
| dc.contributor.author | Martyniuk, M. | |
| dc.contributor.author | Sewell, R. | |
| dc.contributor.author | Westerhout, R. | |
| dc.contributor.author | Umana-Membreno, G. | |
| dc.contributor.author | Musca, C. | |
| dc.contributor.author | Dell, J. | |
| dc.contributor.author | Antoszewski, J. | |
| dc.contributor.author | Faraone, L. | |
| dc.contributor.author | MacIntyre, D. | |
| dc.contributor.author | Thoms, S. | |
| dc.contributor.author | Ironside, Charlie | |
| dc.date.accessioned | 2017-01-30T12:06:55Z | |
| dc.date.available | 2017-01-30T12:06:55Z | |
| dc.date.created | 2015-10-29T04:10:01Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Martyniuk, M. and Sewell, R. and Westerhout, R. and Umana-Membreno, G. and Musca, C. and Dell, J. and Antoszewski, J. et al. 2011. Electrical type conversion of p-type HgCdTe induced by nanoimprinting. Journal of Applied Physics. 109 (9): 096102. | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11937/18270 | |
| dc.identifier.doi | 10.1063/1.3582062 | |
| dc.description.abstract |
A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 m to 50 µm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint and imprint array. The LBIC signal intensity surface maps of imprinted regions and their dependence with measurement temperature correspond well with surface maps of n-on-p HgCdTe photodiodes formed by conventional techniques. | |
| dc.title | Electrical type conversion of p-type HgCdTe induced by nanoimprinting | |
| dc.type | Journal Article | |
| dcterms.source.volume | 109 | |
| dcterms.source.number | 9 | |
| dcterms.source.issn | 0021-8979 | |
| dcterms.source.title | Journal of Applied Physics | |
| curtin.department | Department of Physics and Astronomy | |
| curtin.accessStatus | Fulltext not available |