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    Effects of hydrothermal annealing on characteristics of CuInS 2 thin films by SILAR method

    Access Status
    Fulltext not available
    Authors
    Shi, Y.
    Xue, F.
    Li, C.
    Zhao, Q.
    Qu, Z.
    Li, Xin Yong
    Date
    2012
    Type
    Journal Article
    
    Metadata
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    Citation
    Shi, Y. and Xue, F. and Li, C. and Zhao, Q. and Qu, Z. and Li, X.Y. 2012. Effects of hydrothermal annealing on characteristics of CuInS 2 thin films by SILAR method. Applied Surface Science. 258 (19): pp. 7465-7469.
    Source Title
    Applied Surface Science
    DOI
    10.1016/j.apsusc.2012.04.062
    ISSN
    0169-4332
    School
    Department of Chemical Engineering
    URI
    http://hdl.handle.net/20.500.11937/39605
    Collection
    • Curtin Research Publications
    Abstract

    CuInS2 thin films have been deposited by successive ionic layer absorption and reaction (SILAR) method, then annealed in a Na2S solution (denoted as hydrothermal annealing) at 200 °C for different time. The effect of hydrothermal annealing on the properties of the films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy. The XRD, TEM and SEM results indicate that well-crystallized CuInS2 films could be obtained after annealing in 0.1 mol/L Na2S solution for 1.5 h. The annealed CuInS2 films were slightly S-rich and the direct band gap varied from 1.32 to 1.58 eV as the annealing time increased from 0.5 h to 2 h.

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