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    Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction

    Access Status
    Fulltext not available
    Authors
    Guo, M.K.
    Lu, Chunsheng
    Qin, G.S.
    Zhao, M.H.
    Date
    2021
    Type
    Journal Article
    
    Metadata
    Show full item record
    Citation
    Guo, M.K. and Lu, C. and Qin, G.S. and Zhao, M.H. 2021. Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction. Journal of Electronic Materials. 50: pp. 947–953.
    Source Title
    Journal of Electronic Materials
    DOI
    10.1007/s11664-020-08634-5
    ISSN
    0361-5235
    Faculty
    Faculty of Science and Engineering
    School
    School of Civil and Mechanical Engineering
    URI
    http://hdl.handle.net/20.500.11937/82638
    Collection
    • Curtin Research Publications
    Abstract

    © 2021, The Minerals, Metals & Materials Society. In this paper, we have systematically investigated the temperature gradient-dependent electrical behaviours in a piezoelectric PN junction. A new iterative computational method is proposed by utilizing the 1-D nonlinear theories of thermo-piezoelectric semiconductors. Coupling between the thermal gradient fields and polarization charges is discussed. It is found that the electromechanical field of a piezoelectric PN junction has a quick response to thermal gradient. Furthermore, gate voltage and carrier transport characteristics can be effectively tuned with thermal-induced and piezoelectric charges. It is shown that a piezoelectric PN junction is highly sensitive to the temperature gradient, which may provide an alternative approach to manipulate the carrier transport in piezotronic devices.

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