Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction
dc.contributor.author | Guo, M.K. | |
dc.contributor.author | Lu, Chunsheng | |
dc.contributor.author | Qin, G.S. | |
dc.contributor.author | Zhao, M.H. | |
dc.date.accessioned | 2021-02-18T10:33:59Z | |
dc.date.available | 2021-02-18T10:33:59Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Guo, M.K. and Lu, C. and Qin, G.S. and Zhao, M.H. 2021. Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction. Journal of Electronic Materials. 50: pp. 947–953. | |
dc.identifier.uri | http://hdl.handle.net/20.500.11937/82638 | |
dc.identifier.doi | 10.1007/s11664-020-08634-5 | |
dc.description.abstract |
© 2021, The Minerals, Metals & Materials Society. In this paper, we have systematically investigated the temperature gradient-dependent electrical behaviours in a piezoelectric PN junction. A new iterative computational method is proposed by utilizing the 1-D nonlinear theories of thermo-piezoelectric semiconductors. Coupling between the thermal gradient fields and polarization charges is discussed. It is found that the electromechanical field of a piezoelectric PN junction has a quick response to thermal gradient. Furthermore, gate voltage and carrier transport characteristics can be effectively tuned with thermal-induced and piezoelectric charges. It is shown that a piezoelectric PN junction is highly sensitive to the temperature gradient, which may provide an alternative approach to manipulate the carrier transport in piezotronic devices. | |
dc.language | English | |
dc.publisher | SPRINGER | |
dc.subject | Science & Technology | |
dc.subject | Technology | |
dc.subject | Physical Sciences | |
dc.subject | Engineering, Electrical & Electronic | |
dc.subject | Materials Science, Multidisciplinary | |
dc.subject | Physics, Applied | |
dc.subject | Engineering | |
dc.subject | Materials Science | |
dc.subject | Physics | |
dc.subject | Temperature gradient | |
dc.subject | piezoelectric semiconductor | |
dc.subject | PN junction | |
dc.subject | electrical behaviours | |
dc.subject | ELECTROMECHANICAL PROPERTIES | |
dc.subject | CARRIER DISTRIBUTION | |
dc.subject | FUNDAMENTAL THEORY | |
dc.subject | ENERGY-CONVERSION | |
dc.subject | NANOWIRE | |
dc.subject | GENERATION | |
dc.subject | ARRAY | |
dc.title | Temperature Gradient-Dominated Electrical Behaviours in a Piezoelectric PN Junction | |
dc.type | Journal Article | |
dcterms.source.issn | 0361-5235 | |
dcterms.source.title | Journal of Electronic Materials | |
dc.date.updated | 2021-02-18T10:33:58Z | |
curtin.department | School of Civil and Mechanical Engineering | |
curtin.accessStatus | Fulltext not available | |
curtin.faculty | Faculty of Science and Engineering | |
curtin.contributor.orcid | Lu, Chunsheng [0000-0002-7368-8104] | |
dcterms.source.eissn | 1543-186X | |
curtin.contributor.scopusauthorid | Lu, Chunsheng [57061177000] |