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dc.contributor.authorLi, Tiexin
dc.contributor.authorPeiris, Chandramalika
dc.contributor.authorAragonès, A.C.
dc.contributor.authorHurtado, Carlos
dc.contributor.authorKicic, Anthony
dc.contributor.authorCiampi, Simone
dc.contributor.authorMacGregor, M.
dc.contributor.authorDarwish, T.
dc.contributor.authorDarwish, Nadim
dc.date.accessioned2023-12-12T06:44:05Z
dc.date.available2023-12-12T06:44:05Z
dc.date.issued2023
dc.identifier.citationLi, T. and Peiris, C.R. and Aragonès, A.C. and Hurtado, C. and Kicic, A. and Ciampi, S. and MacGregor, M. et al. 2023. Terminal Deuterium Atoms Protect Silicon from Oxidation. ACS Applied Materials and Interfaces. 15 (40): pp. 47833-47844.
dc.identifier.urihttp://hdl.handle.net/20.500.11937/93933
dc.identifier.doi10.1021/acsami.3c11598
dc.description.abstract

In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltage characteristics are more stable than those measured on Si-H surfaces. At positive voltages, the Si-D stability appears to be related to the flat band potential of Si-D being more positive compared to Si-H surfaces, making Si-D surfaces less attractive to oxidizing OH- ions. The limited oxidation of Si-D surfaces at negative potentials is interpreted by the frequencies of the Si-D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si-D excited vibrational state significantly less than that of Si-H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them.

dc.languageeng
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/DP190100735
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/DP220100553
dc.relation.sponsoredbyhttp://purl.org/au-research/grants/arc/FT200100301
dc.subjectdeuterium
dc.subjectflat band potential
dc.subjectsilicon oxidation
dc.subjectsurface isotope effect
dc.titleTerminal Deuterium Atoms Protect Silicon from Oxidation
dc.typeJournal Article
dcterms.source.volume15
dcterms.source.number40
dcterms.source.startPage47833
dcterms.source.endPage47844
dcterms.source.issn1944-8244
dcterms.source.titleACS Applied Materials and Interfaces
dc.date.updated2023-12-12T06:44:03Z
curtin.note

This document is the Accepted Manuscript version of a Published Work that appeared in final form in Terminal Deuterium Atoms Protect Silicon from Oxidation, copyright © American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.3c11598.

curtin.departmentCurtin School of Population Health
curtin.departmentSchool of Molecular and Life Sciences (MLS)
curtin.accessStatusOpen access
curtin.facultyFaculty of Health Sciences
curtin.facultyFaculty of Science and Engineering
curtin.contributor.orcidCiampi, Simone [0000-0002-8272-8454]
curtin.contributor.orcidDarwish, Nadim [0000-0002-6565-1723]
curtin.contributor.orcidKicic, Anthony [0000-0002-0008-9733]
curtin.contributor.orcidPeiris, Chandramalika [0000-0002-3815-7834]
curtin.contributor.researcheridCiampi, Simone [D-9129-2014]
dcterms.source.eissn1944-8252
curtin.contributor.scopusauthoridCiampi, Simone [21733701500]
curtin.contributor.scopusauthoridDarwish, Nadim [14031207900]
curtin.contributor.scopusauthoridKicic, Anthony [6507472922]
curtin.repositoryagreementV3


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